BYG90-20 Просмотр технического описания (PDF) - Philips Electronics
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BYG90-20 Datasheet PDF : 7 Pages
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Philips Semiconductors
Schottky barrier rectifier diodes
Product specification
BYG90-40 series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN. MAX. UNIT
Per diode
VR
continuous reverse voltage
BYG90-20
BYG90-30
BYG90-40
VRRM
repetitive peak reverse voltage
BYG90-20
BYG90-30
BYG90-40
VRWM
crest working reverse voltage
BYG90-20
BYG90-30
BYG90-40
IF(AV)
average forward current
IFSM
IRSM
Tstg
Tj
non-repetitive peak forward current
non-repetitive peak reverse current
storage temperature
junction temperature
Tamb = 65 °C; see Fig.2;
Rth j-a = 80 K/W; note 1;
VR(equiv) = 0.2 V; note 2
t = 8.3 µs half sine wave;
JEDEC method
tp = 100 µs
−
20
V
−
30
V
−
40
V
−
20
V
−
30
V
−
40
V
−
20
V
−
30
V
−
40
V
−
1
A
−
30
A
−
0.5
A
−65
+125 °C
−
125
°C
Notes
1. Refer to SOD106A standard mounting conditions.
2. For Schottky barrier diodes thermal run-away has to be considered, as in some applications, the reverse power
losses PR are a significant part of the total power losses. Nomograms for determination of the reverse power losses
PR and IF(AV) rating will be available on request.
1996 May 06
3
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