BUZ31 Просмотр технического описания (PDF) - Comset Semiconductors
Номер в каталоге
Компоненты Описание
Список матч
BUZ31 Datasheet PDF : 3 Pages
| |||
SEMICONDUCTORS
BUZ31
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
VDSS
VGS(th)
Drain-Source Breakdown
Voltage
Gate-threshold Voltage
IDSS
Zero Gate Voltage Drain
Current
IGSS
RDS(on)
Gate-Source leakage Current
Drain-Source on Resistance
DYNAMIC CHARACTERISTICS
Test Condition(s)
ID= 250 µA, VGS= 0 V
ID=1 mA, VGS= VDS
VDS= 200 V, VGS= 0 V
Tj= 25 °C
VDS= 200 V, VGS= 0 V
Tj= 125 °C
VGS= 20 V, VDS= 0 V
ID= 9 A, VGS= 10 V
Min Typ Max Unit
200 -
-
V
2.1 3
4
V
- 0.1 1
µA
-
1 100
- 10 100 nA
- 0.16 0.2 Ω
Symbol
Ratings
Test Condition(s) Min Typ Max Unit
gfs
CISS
COSS
CRSS
td(on)
tr
td(off)
tf
Transconductance
VDS >2 * ID * RDS(on)max
ID= 9 A
3
4.2
-
S
Input Capacitance
Output Capacitance
VGS= 0 V, VDS= 25 V
f= 1MHz
- 840 1120
- 180 270 pF
Reverse transfer Capacitance
- 95 150
Turn-on Delay Time
- 12 20
Rise time
Turn-off Delay Time
VDD= 30 V, VGS= 10 V
ID= 3 A, RGS= 50 Ω
-
-
50 75
150 200
ns
Fall Time
- 60 80
REVERSE DIODE
Symbol
Ratings
Test Condition(s) Min Typ Max Unit
Inverse Diode Continuous
IS
Forward Current.
TC = 25°C
Inverse diode direct current,
ISM
pulsed.
TC = 25°C
-
- 14.5
-
-
58
A
VSD
Inverse Diode Forward voltage VGS = 0 V, IF = 29 A
- 1.1 1.6 V
Trr
Reverse Recovery Time
VR = 100 V, IF = IS
- 170 - ns
Qrr
Reverse Recovery Charge
diF/dt = 100 A/µs
- 1.1 - µC
01/10/2012
COMSET SEMICONDUCTORS
2/3
Share Link: 