C67078-S1327-A2 Просмотр технического описания (PDF) - Infineon Technologies

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C67078-S1327-A2

SIPMOS ® Power Transistor

Infineon Technologies 

BUZ 72L

Electrical Characteristics, at Tj = 25˚C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

Static Characteristics

Drain- source breakdown voltage

VGS = 0 V, ID = 0.25 mA, Tj = 25 ˚C

Gate threshold voltage

VGS=VDS, ID = 1 mA

Zero gate voltage drain current

VDS = 100 V, VGS = 0 V, Tj = 25 ˚C

VDS = 100 V, VGS = 0 V, Tj = 125 ˚C

Gate-source leakage current

VGS = 20 V, VDS = 0 V

Drain-Source on-resistance

VGS = 5 V, ID = 5 A

V(BR)DSS

V

100

-

-

VGS(th)

1.2

1.6

2

IDSS

-

µA

0.1

1

-

10

100

IGSS

-

RDS(on)

-

nA

10

100

Ω

0.12

0.2

Data Sheet

2

05.99

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