C67078-S3117-A2 Просмотр технического описания (PDF) - Infineon Technologies

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C67078-S3117-A2

SIPMOS ® Power Transistor

Infineon Technologies 

SIPMOS ® Power Transistor

• N channel

• Enhancement mode

• Avalanche-rated

BUZ 350

Pin 1

G

Pin 2

D

Pin 3

S

Type

BUZ 350

VDS

200 V

ID

22 A

RDS(on)

0.12 Ω

Maximum Ratings

Parameter

Continuous drain current

TC = 33 ˚C

Pulsed drain current

TC = 25 ˚C

Avalanche current,limited by Tjmax

Avalanche energy,periodic limited by Tjmax

Avalanche energy, single pulse

ID = 22 A, VDD = 50 V, RGS = 25 Ω

L = 1.39 mH, Tj = 25 ˚C

Gate source voltage

Power dissipation

TC = 25 ˚C

Operating temperature

Storage temperature

Thermal resistance, chip case

Thermal resistance, chip to ambient

DIN humidity category, DIN 40 040

IEC climatic category, DIN IEC 68-1

Package

TO-218 AA

Symbol

ID

IDpuls

IAR

EAR

EAS

VGS

Ptot

Tj

Tstg

RthJC

RthJA

Data Sheet

1

Ordering Code

C67078-S3117-A2

Values

Unit

A

22

88

22

12

mJ

450

± 20

V

W

125

-55 ... + 150 ˚C

-55 ... + 150

≤1

K/W

75

E

55 / 150 / 56

05.99

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