C67078-S3123-A2 Просмотр технического описания (PDF) - Siemens AG
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C67078-S3123-A2 Datasheet PDF : 9 Pages
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BUZ 332
Not for new design
Typ. output characteristics
ID = ƒ(VDS)
parameter: tp = 80 µs
19
A
Ptot = 150W
l
k
j
i
hg
f
e
16
ID
14
12
10
8
6
4
dVGS [V]
a 4.0
b 4.5
c 5.0
d 5.5
c e 6.0
f 6.5
g 7.0
h 7.5
i 8.0
j 9.0
b k 10.0
l 20.0
2
a
0
0 4 8 12 16 20 24 28 32 V 40
VDS
Typ. transfer characteristics ID = f (VGS)
parameter: tp = 80 µs
VDS≥2 x ID x RDS(on)max
10
A
ID
8
7
6
5
4
3
2
1
0
0 1 2 3 4 5 6 7 8 V 10
VGS
Typ. drain-source on-resistance
RDS (on) = ƒ(ID)
parameter: VGS
2.6
Ω
a
2.2
RDS (on) 2.0
b
c
1.8
1.6
1.4
1.2
d
1.0
e
0.8
f
h
j
g
i
k
0.6
0.4 VGS [V] =
0.2
abcdef
4.05 5.0 5.5 6.0 6.5 7.0
0.0
ghi j k
7.5 8.0 9.0 10.0 20.0
0 2 4 6 8 10 12 14 A 18
ID
Typ. forward transconductance gfs = f (ID)
parameter: tp = 80 µs,
VDS≥2 x ID x RDS(on)max
12
S
10
gfs
9
8
7
6
5
4
3
2
1
0
0123456 7A9
ID
Semiconductor Group
6
07/96
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