Philips Semiconductors
Silicon diffused power transistors
Product specification
BUW13W; BUW13AW
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCESM
VCEO
IC
ICM
IB
IBM
Ptot
Tstg
Tj
collector-emitter peak voltage
BUW13W
BUW13AW
collector-emitter voltage
BUW13W
BUW13AW
collector current (DC)
collector current (peak value)
base current (DC)
base current (peak value)
total power dissipation
storage temperature
junction temperature
VBE = 0
open base
see Figs 2 and 4
tp < 2 ms; see Fig 2
tp < 2 ms
Tmb ≤ 25 °C; see Fig.3
MIN.
MAX.
UNIT
−
850
V
−
1 000
V
−
400
V
−
450
V
−
15
A
−
30
A
−
6
A
−
9
A
−
175
W
−65
+150
°C
−
150
°C
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
VCEOsust
VCEsat
VBEsat
ICES
IEBO
hFE
collector-emitter sustaining voltage IC = 100 mA; IBoff = 0;
BUW13W
L = 25 mH; see Figs 5 and 6
400
BUW13AW
450
collector-emitter saturation voltage
BUW13W
IC = 10 A; IB = 2 A; see
−
Figs 7 and 9
BUW13AW
IC = 8 A; IB = 1.6 A; see
−
Figs 7 and 9
base-emitter saturation voltage
BUW13W
BUW13AW
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
IC = 10 A; IB = 2 A; see Fig.7
−
IC = 8 A; IB = 1.6 A; see Fig.7 −
VCE = VCESMmax; VBE = 0; note 1 −
VCE = VCESMmax; VBE = 0;
−
Tj = 125 °C; note 1
VEB = 9 V; IC = 0
−
VCE = 5 V; IC = 20 mA;
10
see Fig.10
VCE = 5 V; IC = 1.5 A;
10
see Fig.10
TYP.
−
−
−
−
−
−
−
−
−
18
20
MAX.
−
−
1.5
1.5
1.6
1.6
1
4
10
35
35
UNIT
V
V
V
V
V
V
mA
mA
mA
1997 Aug 13
2