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IDT71V256SB12Y

3.3V CMOS FAST SRAM WITH 2.5V COMPATIBLE INPUTS 256K (32K x 8-BIT)

Integrated Device Technology 

IDT71V256SB

3.3V CMOS STATIC RAM WITH 2.5V COMPATIBLE INPUTS 256K (32K x 8-BIT)

COMMERCIAL TEMPERATURE RANGE

DC ELECTRICAL CHARACTERISTICS(1, 2)

(VCC = 3.3V ± 0.3V, VLC = 0.2V, VHC = VCC - 0.2V)

Symbol

Parameter

71V256SB12

Com’l

ICC

Dynamic Operating Current CS ≤ VIL, Outputs

90

Open, VCC = Max., f = fMAX(2)

ISB

Standby Power Supply Current (TTL Level)

20

CS = VIH, VCC = Max., Outputs Open, f = fMAX(2)

ISB1 Full Standby Power Supply Current (CMOS Level)

2

CS ≥ VHC, VCC = Max., Outputs Open, f = 0(2),

VIN ≤ VLC or VIN ≥ VHC

NOTES:

1. All values are maximum guaranteed values.

2. fMAX = 1/tRC, only address inputs cycling at fmax; f = 0 means that no inputs are cycling.

71V256SB15

Com’l.

85

20

2

71V256SB20

Com’l.

Unit

85

mA

20

mA

2

mA

3770 tbl 07

DC ELECTRICAL CHARACTERISTICS

VCC = 3.3V± 0.3V

Symbol

|ILI|

|ILO|

VOL

VOH

Parameter

Input Leakage Current

Output Leakage Current

Output Low Voltage

Output High Voltage

Test Condition

VCC = Max., VIN = GND to VCC

VCC = Max., CS = VIH, VOUT = GND to VCC

IOL = 8mA, VCC = Min.

IOH = –4mA, VCC = Min.

IDT71V256SB

Min.

Typ. Max.

—

—

2

—

—

2

—

—

0.4

2.4

—

—

Unit

µA

µA

V

V

3770 tbl 08

AC TEST CONDITIONS

Input Pulse Levels

Input Rise/Fall Times

Input Timing Reference Levels

Output Reference Levels

AC Test Load

GND to 3.0V

3ns

1.5V

1.5V

See Figures 1 and 2

3770 tbl 09

DATAOUT

350Ω

3.3V

320Ω

30pF*

DATAOUT

350Ω

3.3V

320Ω

5pF*

3770 drw 04

3770 drw 05

Figure 1. AC Test Load

Figure 2. AC Test Load

(for tCLZ, tOLZ, tCHZ, tOHZ, tOW, tWHZ)

*Includes scope and jig capacitances

3

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