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BUL54A-TO5

SILICON POWER NPN TRANSISTOR

Semelab - > TT Electronics plc  

SILICON POWER

NPN TRANSISTOR

BUL54A-TO5

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated)

Symbols Parameters

Test Conditions

ICBO

Collector-Base Cut-Off Current

VCB = 1000V

TC = 125°C

ICEO

Collector-Emitter Cut- off current

IB = 0

VCE = 500V

IEBO

Emitter-Base Cut-Off Current

V(BR)CEO(1) Collector-Emitter Breakdown Voltage

VEB = 9V

IC = 0

IC = 10mA

TC = 125°C

V(BR)CBO Collector-Base Breakdown Voltage

IC = 100µA

V(BR)EBO Emitter-Base Breakdown Voltage

IE = 100µA

VCE(sat)(1) Collector-Emitter Saturation Voltage

IC = 100mA

IC = 0.5A

IB =20mA

IB =0.1A

IC = 1.0A

IB = 0.2A

VBE(sat)(1)

Base-Emitter Saturation Voltage

IC = 0.5A

IC = 1.0A

IB = 0.1A

IB = 0.2A

IC = 0.1A

VCE = 5V

hFE(1)

Forward-current transfer ratio

IC = 0.5A

IC = 1.0A

VCE = 5V

VCE = 1.0V

TC = 125°C

DYNAMIC CHARACTERISTICS

fT

Transition Frequency

Cobo

Output Capacitance

IC = 0.2A

VCB = 20V

VCE = 4V

f = 1.0MHz

Min

500

1000

10

20

12

5

Typ

0.05

0.15

0.3

0.8

0.9

50

15

8

5

Max

10

100

100

10

100

0.1

0.2

0.5

1.0

1.1

Units

µA

V

20

MHz

20

pF

Notes

(1) Pulse Width ≤ 300us, δ ≤ 2%

Semelab Limited

Coventry Road, Lutterworth, Leicestershire, LE17 4JB

Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com

Document Number 5977

Website: http://www.semelab-tt.com

Issue 2

Page 2 of 3

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