BUK7520-100A Просмотр технического описания (PDF) - Philips Electronics
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BUK7520-100A Datasheet PDF : 15 Pages
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Philips Semiconductors
BUK7520-100A; BUK7620-100A
TrenchMOS™ standard level FET
5. Quick reference data
Table 2: Quick reference data
Symbol Parameter
VDS
ID
Ptot
Tj
RDSon
drain-source voltage (DC)
drain current (DC)
total power dissipation
junction temperature
drain-source on-state resistance
6. Limiting values
Conditions
Tmb = 25 °C; VGS = 10 V
Tmb = 25 °C
VGS = 10 V; ID = 25 A
Tj = 25 °C
Tj = 175 °C
Typ
Max Unit
−
100
V
−
63
A
−
200
W
−
175
°C
17
20
mΩ
−
50
mΩ
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max Unit
VDS
VDGR
VGS
ID
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
RGS = 20 kΩ
Tmb = 25 °C; VGS = 10 V;
Figure 2 and 3
−
100
V
−
100
V
−
±20
V
−
63
A
IDM
peak drain current
Tmb = 100 °C; VGS = 10 V; Figure 2
−
44
A
Tmb = 25 °C; pulsed; tp ≤ 10 µs;
Figure 3
−
253
A
Ptot
total power dissipation
Tstg
storage temperature
Tj
operating junction temperature
Tmb = 25 °C; Figure 1
−
200
W
−55
+175 °C
−55
+175 °C
Source-drain diode
IDR
IDRM
reverse drain current (DC)
pulsed reverse drain current
Tmb = 25 °C
Tmb = 25 °C; pulsed; tp ≤ 10 µs
−
63
A
−
253
A
Avalanche ruggedness
WDSS non-repetitive avalanche energy
unclamped inductive load; ID = 60 A;
−
VDS ≤ 100 V; VGS = 10 V; RGS = 50 Ω;
starting Tmb = 25 °C
400
mJ
9397 750 07885
Product specification
Rev. 01 — 5 February 2001
© Philips Electronics N.V. 2001. All rights reserved.
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