BUK7506-75B Просмотр технического описания (PDF) - Philips Electronics
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BUK7506-75B Datasheet PDF : 15 Pages
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Philips Semiconductors
BUK75/7606-75B
TrenchMOS™ standard level FET
5
VGS(th)
(V)
4
3
max
typ
03aa32
10-1
ID
(A)
10-2
10-3
03aa35
min typ
max
2
min
10-4
1
10-5
0
-60
0
60
120 Tj (°C) 180
10-6
0
2
4
6
VGS (V)
ID = 1 mA; VDS = VGS
Fig 9. Gate-source threshold voltage as a function of
junction temperature.
Tj = 25 °C; VDS = VGS
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
120
gfs
(S)
100
03ng95
80
60
40
20
0
0
20
40
60
ID (A)
Tj = 25 °C; VDS = 25 V
Fig 11. Forward transconductance as a function of
drain current; typical values.
8000
C
(pF)
6000
Ciss
03nh00
4000
2000
0
10-1
Coss
Crss
1
10
102
VDS (V)
VGS = 0 V; f = 1 MHz
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
9397 750 10278
Product data
Rev. 02 — 20 September 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
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