BU808 Просмотр технического описания (PDF) - Inchange Semiconductor
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BU808 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BU808
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 700V(Min)
·High Switching Speed
APPLICATIONS
·Designed for use in three-phase AC motor control systems
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCES
Collector- Emitter Voltage VBE=0
1500
V
VCEO
Collector-Emitter Voltage
700
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
12
A
ICM
Collector Current-Peak
20
A
IBB
Base Current-Continuous
8
A
IBM
Base Current-Peak
PC
Collector Power Dissipation
@TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature
12
A
160
W
150
℃
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case 0.78 ℃/W
isc Website：www.iscsemi.cn
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