BTA40A Просмотр технического описания (PDF) - STMicroelectronics

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производитель

BTA40A

40A TRIACS

STMicroelectronics 

BTA40 A/B

THERMAL RESISTANCES

Symbol

Rth (j-c) DC Junction to case for DC

Parameter

Rth (j-c) AC Junction to case for 360° conduction angle ( F= 50 Hz)

Value

1.2

0.9

Unit

°C/W

°C/W

GATE CHARACTERISTICS (maximum values)

PG (AV) = 1W PGM = 40W (tp = 20 µs) IGM = 8A (tp = 20 µs) VGM = 16V (tp = 20 µs).

ELECTRICAL CHARACTERISTICS

Symbol

Test Conditions

Quadrant

IGT

VD=12V (DC) RL=33Ω

Tj=25°C

VGT

VGD

tgt

IL

VD=12V (DC) RL=33Ω

VD=VDRM RL=3.3kΩ

VD=VDRM IG = 500mA

dIG/dt = 3A/µs

IG=1.2 IGT

Tj=25°C

Tj=125°C

Tj=25°C

Tj=25°C

IH *

VTM *

IDRM

IRRM

IT= 500mA gate open

ITM= 60A tp= 380µs

VDRM Rated

VRRM Rated

dV/dt *

Linear slope up to VD=67%VDRM

gate open

Tj=25°C

Tj=25°C

Tj=25°C

Tj=125°C

Tj=125°C

(dV/dt)c * (dI/dt)c = 18A/ms

Tj=125°C

* For either polarity of electrode A2 voltage with reference to electrode A1.

I-II-III

IV

I-II-III-IV

I-II-III-IV

I-II-III-IV

I-III-IV

II

MAX

MAX

MAX

MIN

TYP

TYP

MAX

MAX

MAX

MAX

MIN

MIN

Suffix

A

B

100

50

150 100

1.5

0.2

2.5

70

60

200 180

100

80

1.8

0.01

6

250

10

Unit

mA

V

V

µs

mA

mA

V

mA

V/µs

V/µs

2/5

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