BTA10-600GP Просмотр технического описания (PDF) - STMicroelectronics
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BTA10-600GP Datasheet PDF : 7 Pages
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BTA10-600GP
Characteristics
Table 3. Gate characteristics (maximum values)
Symbol
Parameter
PG(AV)
PGM
IGM
VGM
Average gate power dissipation
Peak gate power dissipation
Peak gate current
Peak positive gate voltage
tp = 20 µs
tp = 20 µs
tp = 20 µs
Value
Unit
1
W
10
W
4
A
16
V
Table 4. Thermal resistances
Symbol
Parameter
Rth(j-a)
Rth(j-c) DC
Rth(j-c) AC
Junction to ambient
Junction to case for DC
Junction to case for 360° conduction angle (F = 50 Hz)
Value
60
4
3
Unit
° C/W
Figure 1. Maximum rms power dissipation
versus rms on-state current
Figure 2.
Maximum rms power dissipation
and maximum allowable
temperatures (Tamb and Tcase)
For different thermal resistances
heatsink + contact
F = 50 Hz, curves
are cut off by
(dI/dt)c limitation
Figure 3.
On-state rms current versus case
temperature
Figure 4. Relative variation of thermal
impedance versus pulse duration
Zth/Rth
1
Zth(j-c)
0.1
Zth(j-a)
0.01
1E-3
1E-2
1E-1
1E+0
tp(s)
1E+1 1E+2 5E+2
Doc ID 022222 Rev 1
3/7
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