BTA10-600GPRG Просмотр технического описания (PDF) - STMicroelectronics
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BTA10-600GPRG Datasheet PDF : 7 Pages
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Characteristics
1
Characteristics
BTA10-600GP
Table 1. Absolute ratings (limiting values)
Symbol
Parameter
VDRM
VRRM
IT(RMS)
Repetitive peak off-state voltage Tj = 125° C
RMS on-state current (360° conduction angle)
ITSM
Non repetitive surge peak on-state current
(Tj initial = 25° C)
I2t
I²t Value for fusing
dI/dt
Critical rate of rise of on-state current
IG = 500 mA diG/dt = 1 A/µs
Tstg
Storage junction temperature range
Tj
Operating junction temperature range
Tc = 90° C
tp = 8.3 ms
tp = 10 ms
tp = 10 ms
Repetitive
F = 50 Hz
Non repetitive
Value
600
10
126
120
72
10
50
-40 to +150
-40 to +125
Table 2. Electrical characteristics
Symbol
Test conditions
IGT (1) VD = 12 V (DC) RL = 33 Ω
Tj = 25° C
VGT
VD = 12 V (DC) RL = 33 Ω
Tj = 25° C
VGD
VD = VDRM RL = 3.3 kΩ
Tj = 110° C
tgt
VD = VDRM IG = 500 mA dIG/dt = 3 A/µs Tj = 25° C
IL
IG = 1.2 IGT
Tj = 25° C
IH (1)
VTM (1)
IDRM
IRRM
IT = 100 mA gate open
ITM = 14 A tp = 380 µs
VDRM = VRRM
dV/dt (1)
Linear slope up to VD = 67% VDRM
gate open
Tj = 25° C
Tj = 25° C
Tj = 25° C
Tj = 110° C
Tj = 110° C
(dV/dt)c (1) (dI/dt)c = 2.2 A/ms
Tj = 110° C
1. For either polarity of electrode A2 voltage with reference to electrode A1.
Quadrant
I - II- III MAX
IV
MAX
I - II - III - IV MAX
I - II - III - IV MIN
I - II - III - IV TYP
I - II - III
TYP
IV
MAX
MAX
MAX
MAX
MIN
TYP
MIN
TYP
Value
25
100
1.5
0.2
2
20
40
13
1.5
0.01
0.5
30
100
1
10
Unit
V
A
A
A2s
A/µs
°C
Unit
mA
V
V
µs
mA
mA
V
mA
V/µs
V/µs
2/7
Doc ID 022222 Rev 1
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