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BT258S-800R118

Thyristors logic level

NXP Semiconductors. 

NXP Semiconductors

Thyristors

logic level

Product specification

BT258S-800R

GENERAL DESCRIPTION

Passivated, sensitive gate thyristor in

a plastic envelope, suitable for

surface mounting, intended for use in

general purpose switching and

phase control applications. These

devices are intended to be interfaced

directly to microcontrollers, logic

integrated circuits and other low

power gate trigger circuits.

QUICK REFERENCE DATA

SYMBOL PARAMETER

VDRM, VRRM

IT(AV)

IT(RMS)

ITSM

Repetitive peak off-state voltages

Average on-state current

RMS on-state current

Non-repetitive peak on-state current

MAX. UNIT

800 V

5A

8A

75 A

PINNING - SOT428

PIN

NUMBER

1

cathode

2

anode

3

gate

tab

anode

PIN CONFIGURATION

tab

2

1

3

SYMBOL

a

k

g

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VDRM, VRRM Repetitive peak off-state

-

voltages

IT(AV)

IT(RMS)

ITSM

I2t

dIT/dt

IGM

VRGM

PGM

PG(AV)

Tstg

Tj

Average on-state current half sine wave; Tmb ≤ 111 ˚C

-

RMS on-state current

all conduction angles

-

Non-repetitive peak

on-state current

half sine wave; Tj = 25 ˚C prior to

surge

t = 10 ms

-

t = 8.3 ms

-

I2t for fusing

t = 10 ms

-

Repetitive rate of rise of ITM = 10 A; IG = 50 mA;

-

on-state current after

dIG/dt = 50 mA/µs

triggering

Peak gate current

-

Peak reverse gate voltage

-

Peak gate power

-

Average gate power

over any 20 ms period

-

Storage temperature

-40

Operating junction

-

temperature

800

5

8

75

82

28

50

2

5

5

0.5

150

1251

V

A

A

A

A

A2s

A/µs

A

V

W

W

˚C

˚C

1 Note: Operation above 110˚C may require the use of a gate to cathode resistor of 1kΩ or less.

October 2002

1

Rev 2.000

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