BT151B Просмотр технического описания (PDF) - Philips Electronics
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BT151B Datasheet PDF : 6 Pages
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Philips Semiconductors
Thyristors
Product specification
BT151B series
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
Rth j-mb
Rth j-a
Thermal resistance
junction to mounting base
Thermal resistance
minimum footprint, FR4 board
junction to ambient
MIN. TYP. MAX. UNIT
-
-
1.3 K/W
-
55
- K/W
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
IGT
Gate trigger current
IL
Latching current
IH
Holding current
VT
On-state voltage
VGT
Gate trigger voltage
ID, IR
Off-state leakage current
CONDITIONS
VD = 12 V; IT = 0.1 A
VD = 12 V; IGT = 0.1 A
VD = 12 V; IGT = 0.1 A
IT = 23 A
VD = 12 V; IT = 0.1 A
VD = VDRM(max); IT = 0.1 A; Tj = 125 ˚C
VD = VDRM(max); VR = VRRM(max); Tj = 125 ˚C
MIN.
-
-
-
-
-
0.25
-
TYP.
2
10
7
1.4
0.6
0.4
0.1
MAX.
15
40
20
1.75
1.5
-
0.5
UNIT
mA
mA
mA
V
V
V
mA
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
dVD/dt
tgt
tq
Critical rate of rise of
off-state voltage
Gate controlled turn-on
time
Circuit commutated
turn-off time
VDM = 67% VDRM(max); Tj = 125 ˚C;
exponential waveform;
Gate open circuit
RGK = 100 Ω
ITM = 40 A; VD = VDRM(max); IG = 0.1 A;
dIG/dt = 5 A/µs
VD = 67% VDRM(max); Tj = 125 ˚C;
ITM = 20 A; VR = 25 V; dITM/dt = 30 A/µs;
dVD/dt = 50 V/µs; RGK = 100 Ω
MIN. TYP. MAX. UNIT
50 130
- V/µs
200 1000 - V/µs
-
2
-
µs
-
70
-
µs
September 1997
2
Rev 1.100
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