BSP324 Просмотр технического описания (PDF) - Infineon Technologies

Номер в каталоге

Компоненты Описание

Список матч

BSP324

SIPMOS® Power-Transistor

Infineon Technologies 

Rev. 2.1

BSP324

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter

Symbol

Conditions

Values

Unit

Dynamic Characteristics

Transconductance

g fs

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

min. typ. max.

VDS≥2*I D*RDS(on)max,

ID=0.14A

VGS=0, VDS=25V,

f=1MHz

VDD=225V, VGS=10V,

ID=0.17A, RG=6Ω

0.09 0.19 - S

- 103 154 pF

-

9.2 13.6

-

3.8 5.7

-

4.6 6.9 ns

-

4.4 6.6

-

17 25

-

68 102

Gate Charge Characteristics

Gate to source charge

Gate to drain charge

Gate charge total

Qgs

Qgd

Qg

VDD =320V, ID =0.17A

VDD =320V, ID =0.17A,

VGS=0 to 10V

Gate plateau voltage

V(plateau) VDD =320V, ID =0.17A

- 0.35 0.45 nC

- 2.17 2.82

- 4.54 5.9

-

3.6

-V

Reverse Diode

Inverse diode continuous

IS

TA=25°C

forward current

-

- 0.17 A

Inv. diode direct current, pulsed ISM

Inverse diode forward voltage VSD

Reverse recovery time

trr

Reverse recovery charge

Qrr

VGS=0, IF=0.17A

VR=200V, IF=lS,

di F/dt=100A/µs

-

- 0.68

-

0.8 1.2 V

-

85 127 ns

- 104 156 nC

Page 3

2009-08-18

Share Link: