BSM200GA170DN2S Просмотр технического описания (PDF) - eupec GmbH

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BSM200GA170DN2S

IGBT Power Module

eupec GmbH 

BSM 200 GA 170 DN2

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter

Symbol

Values

min.

typ.

max.

Switching Characteristics, Inductive Load at Tj = 125 °C

Turn-on delay time

td(on)

VCC = 1200 V, VGE = 15 V, IC = 200 A

RGon = 6.8 Ω

-

Rise time

tr

VCC = 1200 V, VGE = 15 V, IC = 200 A

RGon = 6.8 Ω

-

Turn-off delay time

td(off)

VCC = 1200 V, VGE = -15 V, IC = 200 A

RGoff = 6.8 Ω

-

Fall time

tf

VCC = 1200 V, VGE = -15 V, IC = 200 A

RGoff = 6.8 Ω

-

530

200

1250

110

1000

400

1800

160

Unit

ns

Free-Wheel Diode

Diode forward voltage

VF

IF = 200 A, VGE = 0 V, Tj = 25 °C

-

IF = 200 A, VGE = 0 V, Tj = 125 °C

-

Reverse recovery time

trr

IF = 200 A, VR = -1200 V, VGE = 0 V

diF/dt = -1400 A/µs, Tj = 125 °C

-

Reverse recovery charge

Qrr

IF = 200 A, VR = -1200 V, VGE = 0 V

diF/dt = -1400 A/µs

Tj = 25 °C

-

Tj = 125 °C

-

V

2.3

2.8

2.1

-

µs

0.8

-

µC

14

-

50

-

3

Oct-27-1997

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