C67070-A2302-A70 Просмотр технического описания (PDF) - Unspecified

Номер в каталоге

Компоненты Описание

Список матч

C67070-A2302-A70

IGBT-Modules

Unspecified 

BSM 400 GA 120 DN2

Typ. gate charge

VGE = ƒ(QGate)

parameter: IC puls = 400 A

20

V

VGE 16

14

600 V

800 V

12

10

8

6

4

2

0

0 400 800 1200 1600 2000 nC 2800

QGate

Typ. capacitances

C = f (VCE)

parameter: VGE = 0 V, f = 1 MHz

10 2

nF

C

10 1

Ciss

Coss

Crss

10 0

10 -1

0

5 10 15 20 25 30 V 40

VCE

Reverse biased safe operating area

ICpuls = f(VCE) , Tj = 150°C

parameter: VGE = ± 15 V, tp ≤ 1 ms, L < 20 nH

Short circuit safe operating area

ICsc = f(VCE) , Tj = 150°C

parameter: VGE = ± 15 V, tSC ≤ 10 µs, L < 20 nH

2.5

12

ICpulsIC

di/dt =

1.5

1000A/µs

3000A/µs

5000A/µs

1.0

0.5

ICsc/IC

di/dt = 1000A/µs

8

3000A/µs

5000A/µs

6

4

° allowed number of

short circuit: <1000

° time between short

2 circuit: >1s

0.0

0 200 400 600 800 1000 1200 V 1600

VCE

0

0 200 400 600 800 1000 1200 V 1600

VCE

6

Oct-30-1997

Share Link: