BS616UV2019 Просмотр технического описания (PDF) - Brilliance Semiconductor
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BS616UV2019 Datasheet PDF : 11 Pages
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n AC ELECTRICAL CHARACTERISTICS (TA = -40OC to +85OC)
WRITE CYCLE
BS616UV2019
JEDEC
PARAMETER
NAME
PARANETER
NAME
DESCRIPTION
CYCLE TIME : 85ns CYCLE TIME : 100ns
(VCC=1.9~3.6V)
(VCC=1.9~3.6V)
MIN. TYP. MAX. MIN. TYP. MAX.
UNITS
tAVAX
tAVWL
tAVWH
tELWH
tBLWH
tWLWH
tWHAX1
tWHAX2
tWLQZ
tDVWH
tWHDX
tGHQZ
tWHQX
tWC
tAS
tAW
tCW
tBW
tWP
tWR1
tWR2
tWHZ
tDW
tDH
tOHZ
tOW
Write Cycle Time
85
--
-- 100 --
--
ns
Address Set up Time
0
--
--
0
--
--
ns
Address Valid to End of Write
85
--
-- 100 --
--
ns
Chip Select to End of Write
85
--
-- 100 --
--
ns
Data Byte Control to End of Write (LB, UB) 50
--
--
70
--
--
ns
Write Pulse Width
Write Recovery Time
40
--
--
50
--
--
ns
(CE, WE) 0
--
--
0
--
--
ns
Write Recovery Time
(CE2) 0
--
--
0
--
--
ns
Write to Output High Z
--
--
35
--
--
40
ns
Data to Write Time Overlap
35
--
--
40
--
--
ns
Data Hold from Write Time
0
--
--
0
--
--
ns
Output Disable to Output in High Z
--
--
35
--
--
40
ns
End of Write to Output Active
10
--
--
10
--
--
ns
n SWITCHING WAVEFORMS (WRITE CYCLE)
WRITE CYCLE 1 (1)
tWC
ADDRESS
OE
tCW(11)
tWR1(3)
CE
(5)
CE2
LB, UB
WE
DOUT
DIN
R0201-BS616UV2019
(5,12)
tCW(11)
tBW
tWR2(3)
tAS
tOHZ(4,10)
tAW
tWP(2)
tDH
tDW
7
Revision 1.3
May.
2006
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