BS616LV8025BI Просмотр технического описания (PDF) - Brilliance Semiconductor
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BS616LV8025BI
Brilliance Semiconductor
BS616LV8025BI Datasheet PDF : 11 Pages
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BSI
BS616LV8025
AC ELECTRICAL CHARACTERISTICS ( TA = 0oC to +70oC, Vcc=5V)
WRITE CYCLE
JEDEC
PARAMETER
NAME
t
AVAX
t
E1LWH
t
AVWL
t
AVWH
t
WLWH
t
WHAX
t
BW
t
WLQZ
t
DVWH
t
WHDX
t
GHQZ
t
WHQX
PARAMETER
NAME
t
WC
t
CW
t
AS
t
AW
t
WP
t
WR
t (1)
BW
t
WHZ
t
DW
t
DH
t
OHZ
t
OW
DESCRIPTION
Write Cycle Time
Chip Select to End of Write
Address Set up Time
Address Valid to End of Write
Write Pulse Width
Write Recovery Time (CE2, CE1, WE)
Data Byte Control to End of Write(LB,UB)
Write to Output in High Z
Data to Write Time Overlap
Data Hold from Write Time
Output Disable to Output in High Z
End of Write to Output Active
BS616LV8025-55
MIN.
55
55
0
55
30
0
25
0
25
0
0
5
TYP.
MAX.
25
25
BS616LV8025-70 UNIT
MIN. TYP. MAX.
70
ns
70
ns
0
ns
70
ns
35
ns
0
ns
30
ns
0
30 ns
30
ns
0
ns
0
30 ns
5
ns
NOTE :
1. tBW is 25ns/30ns (@speed=55ns/70ns) with address toggle. ; tBW is 55ns/70ns (@speed=55ns/70ns) without address toggle.
SWITCHING WAVEFORMS (WRITE CYCLE)
WRITE CYCLE1 (1)
t WC
ADDRESS
(3)
t WR
OE
CE2
CE1
LB,UB
WE
D OUT
D IN
R0201-BS616LV8025
t AS
(4,10)
t OHZ
(5)
(11)
t CW
(5)
(5)
t AW
t BW
t WP
(2)
t DW
(3)
t DH
8
Revision 2.4
April 2002
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