BS616LV8017 Просмотр технического описания (PDF) - Brilliance Semiconductor

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BS616LV8017

Very Low Power CMOS SRAM 512K X 16 bit

Brilliance Semiconductor 

n Revision History

Revision No. History

2.2

Add Icc1 characteristic parameter

Improve Iccsb1 spec.

I-grade from 110uA to 50uA at 5.0V

10uA to 8.0uA at 3.0V

C-grade from 55uA to 25uA at 5.0V

5.0uA to 4.0uA at 3.0V

2.3

Change I-grade operation temperature range

- from –25OC to –40OC

BS616LV8017

Draft Date

Jan. 13, 2006

Remark

May. 25, 2006

R0201-BS616LV8017

11

Revision 2.3

May.

2006

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