BS616LV8012 Просмотр технического описания (PDF) - Brilliance Semiconductor
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BS616LV8012 Datasheet PDF : 9 Pages
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BSI
BS616LV8012
AC ELECTRICAL CHARACTERISTICS ( TA = 0 to + 70oC, Vcc=3V)
WRITE CYCLE
JEDEC
PARAMETER
NAME
PARAMETER
NAME
DESCRIPTION
BS616LV8012-70
MIN. TYP. MAX.
t AVAX
t E1LWH
t AVWL
t AVWH
tWLWH
tWHAX
tBW
tWLQZ
tDVWH
tWHDX
tGHQZ
tWC
tCW
t AS
t AW
tWP
tWR
t
(1)
BW
tWHZ
tDW
tDH
tOHZ
Write Cycle Time
70 -- --
Chip Select to End of Write
70 -- --
Address Setup Time
0 -- --
Address Valid to End of Write
70 -- --
Write Pulse Width
35 -- --
Write recovery Time
(CE2,CE1,WE) 0 -- --
Date Byte Control to End of Write (LB,UB) 30 -- --
Write to Output in High Z
0 -- 30
Data to Write Time Overlap
30 -- --
Data Hold from Write Time
0 -- --
Output Disable to Output in High Z
0 -- 30
tWHOX
tOW
End of Write to Output Active
5 -- --
BS616LV8012-10
MIN. TYP. MAX.
100 -- --
100 -- --
0 -- --
100 -- --
50 -- --
0 -- --
40 -- --
0 -- 40
40 -- --
0 -- --
0 -- 40
10 -- --
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
NOTE :
1. tBW is 30ns/40ns (@speed=70ns/100ns) with address toggle. ; tBW is 70ns/100ns (@speed=70ns/100ns) without address toggle.
SWITCHING WAVEFORMS (WRITE CYCLE)
WRITE CYCLE1 (1)
t WC
ADDRESS
(3)
t WR
OE
CE2
CE1
LB,UB
WE
D OUT
D IN
R0201-BS616LV8012
t AS
(4,10)
t OHZ
(5)
(11)
t CW
(5)
(5)
t AW
t BW
t WP
(2)
t DW
(3)
t DH
6
Revision 2.4
April 2002
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