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BS616LV4023BI

Very Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable

Brilliance Semiconductor 

BSI

BS616LV4023

„ DC ELECTRICAL CHARACTERISTICS (TA = 0oC to +70oC)

PARAMETER

NAME

VIL

VIH

PARAMETER

Guaranteed Input Low

Voltage(2)

Guaranteed Input High

Voltage(2)

TEST CONDITIONS

Vcc=3V

Vcc=3V

IIL

Input Leakage Current Vcc = Max, VIN= 0V to Vcc

MIN. TYP. (1) MAX.

-0.5 --

0.8

2.0

--

Vcc+0.2

--

--

1

UNITS

V

V

uA

IOL

Output Leakage Current

Vcc = Max, CE1 = VIH or CE2=VIL or OE =

VIH, VI/O = 0V to Vcc

--

--

1

uA

VOL

Output Low Voltage

Vcc = Max, IOL = 2mA

Vcc=3V

--

--

0.4

V

VOH

Output High Voltage

Vcc = Min, IOH = -1mA

Vcc=3V 2.4

--

--

V

ICC

Operating Power Supply Vcc = Max, CE1= VIL, CE2=VIH

Current

IDQ = 0mA, F = Fmax(3)

Vcc=3V

--

--

20

mA

ICCSB

Standby Current-TTL

Vcc = Max, CE1 = VIH or CE2=VIL

IDQ = 0mA

Vcc=3V

--

--

1

mA

Vcc = Max, CE1ЊVcc-0.2V or

ICCSB1

Standby Current-CMOS CE2Љ0.2V; VINЊ Vcc - 0.2V or

Vcc=3V

--

0.25

1.5

uA

VINЉ0.2V

1. Typical characteristics are at TA = 25oC.

2. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.

3. Fmax = 1/tRC .

R0201-BS616LV4023

4

Revision 2.0

April 2002

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