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BS616LV4020BC

Very Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable

Brilliance Semiconductor 

BSI

BS616LV4020

„ DC ELECTRICAL CHARACTERISTICS (TA = 0oC to +70oC)

PARAMETER

NAME

PARAMETER

VIL

Guaranteed Input Low

Voltage(2)

VIH

Guaranteed Input High

Voltage(2)

TEST CONDITIONS

Vcc=3V

Vcc=3V

IIL

Input Leakage Current Vcc = Max, VIN = 0V to Vcc

MIN. TYP.(1) MAX.

UNITS

-0.5

--

0.8

V

2.0

-- Vcc+0.2 V

--

--

1

uA

I OL

Output Leakage Current

Vcc = Max, CE1 = VIH or CE2=VILor OE = VIH,

VI/O = 0V to Vcc

--

--

1

uA

V OL

Output Low Voltage

Vcc = Max, IOL= 2mA

Vcc=3V

--

--

0.4

V

VOH

Output High Voltage

Vcc = Min, IOH = -1mA

Vcc=3V

2.4

--

--

V

ICC

Operating Power Supply Vcc = Max, CE1= VIL, CE2=V IH

Current

IDQ = 0mA, F =Fmax(3)

Vcc=3V

--

--

20

mA

ICCSB

Standby Current -TTL

Vcc = Max, CE1 = VIH or CE2=VIL

IDQ = 0mA

Vcc=3V

--

--

1

mA

Vcc = Max, CE1ЊVcc-0.2V or

I CCSB1

Standby Current -CMOS CE2Љ0.2V ;VIN Њ Vcc - 0.2V or

Vcc=3V

--

0.5

8

uA

VINЉ0.2V

1. Typical characteristics are at TA = 25oC.

2. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.

3. Fmax = 1/tRC .

R0201-BS616LV4020

4

Revision 2.3

April 2002

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