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BS616LV2025

Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable

Brilliance Semiconductor 

BSI

BS616LV2025

„ DC ELECTRICAL CHARACTERISTICS (TA = 0oC to +70oC)

PARAMETER

NAME

V IL

V IH

PARAMETER

Guaranteed Input Low

Voltage (2)

Guaranteed Input High

Voltage (2)

TEST CONDITIONS

MIN. TYP.(1) MAX. UNITS

Vcc=5.0V -0.5 --

0.8

V

Vcc=5.0V 2.2

--

Vcc+0.2

V

I IL

Input Leakage Current Vcc = Max, VIN = 0V to Vcc

--

--

1

uA

I OL

V OL

V OH

I CC

Output Leakage Current

Vcc = Max, CE1 = VIHor CE2=VILor OE = VIH,

VI/O = 0V to Vcc

--

--

1

uA

Output Low Voltage

Output High Voltage

Vcc = Max, IOL= 2mA

Vcc = Min, IOH = -1mA

Vcc=5.0V --

--

0.4

V

Vcc=5.0V 2.4

--

--

V

Operating Power Supply Vcc = Max, CE1= VIL, CE2=VIH

Current

IDQ = 0mA, F = Fmax (3)

Vcc=5.0V --

--

40

mA

I CCSB

Standby Current-TTL

Vcc = Max, CE1 = VIH or CE2=VIL

IDQ = 0mA

Vcc=5.0V

--

--

1

mA

Vcc = Max, CE1ЊVcc-0.2V or

CE2Љ0.2V,

I CCSB1

Standby Current-CMOS

Other inputsЊ Vcc - 0.2V or

Vcc=5.0V --

0.6 6

uA

VINЉ0.2V

1. Typical characteristics are at TA = 25oC.

2. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.

3. Fmax = 1/tRC .

R0201-BS616LV2025

4

Revision 2.4

April 2002

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