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BS616LV2023AC-10

Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable

Brilliance Semiconductor 

BSI

BS616LV2023

„ DC ELECTRICAL CHARACTERISTICS (TA = 0oC to +70oC)

PARAMETER

NAME

V IL

V IH

PARAMETER

Guaranteed Input Low

Voltage (2)

Guaranteed Input High

Voltage (2)

I IL

Input Leakage Current

TEST CONDITIONS

MIN. TYP.(1) MAX. UNITS

Vcc=3.0V -0.5 --

0.8

V

Vcc=3.0V 2.0 -- Vcc+0.2 V

Vcc = Max, VIN = 0V to Vcc

-- --

1

uA

I OL

V OL

Output Leakage Current

Vcc = Max, CE1 = VIH or CE2=VIL or OE = VIH,

VI/O = 0V to Vcc

-- --

1

uA

Output Low Voltage

Vcc = Max, IOL = 2mA

Vcc=3.0V --

--

0.4

V

V OH

Output High Voltage

Vcc = Min, IOH = -1mA

Vcc=3.0V 2.4 --

--

V

I CC

Operating Power Supply Vcc = Max, CE1= V IL, CE2=VIH

Current

IDQ = 0mA, F = Fmax (3)

Vcc=3.0V --

--

20

mA

I CCSB

Standby CurrentΓTL

Vcc = Max, CE1 = VIHor CE2=VIL

IDQ = 0mA

Vcc=3.0V --

--

1

mA

I CCSB1

Vcc = Max, CE1ЊVcc-0.2V or

Standby CurrentΓMOS CE2Љ0.2V ,

Vcc=3.0V -- 0.1

Other inputs Њ Vcc - 0.2V or VINЉ0.2V

0.7 uA

1. Typical characteristics are at TA = 25oC.

2. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.

3. Fmax = 1/tRC .

R0201-BS616LV2023

4

Revision 2.4

April 2002

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