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BS616LV2011

Very Low Power/Voltage CMOS SRAM 128K X 16 bit

Brilliance Semiconductor 

BSI

BS616LV2011

„ ABSOLUTE MAXIMUM RATINGS(1)

SYMBOL

VTERM

TBIAS

TSTG

PT

IOUT

PARAMETER

Terminal Voltage with

Respect to GND

Temperature Under Bias

Storage Temperature

Power Dissipation

DC Output Current

RATING

-0.5 to

Vcc+0.5

-40 to +125

-60 to +150

1.0

20

UNITS

V

OC

OC

W

mA

1. Stresses greater than those listed under ABSOLUTE MAXIMUM

RATINGS may cause permanent damage to the device. This is a

stress rating only and functional operation of the device at these

or any other conditions above those indicated in the operational

sections of this specification is not implied. Exposure to absolute

maximum rating conditions for extended periods may affect

reliability.

„ OPERATING RANGE

RANGE

Commercial

AMBIENT

TEMPERATURE

0 O C to +70 O C

Industrial

-40 O C to +85 O C

Vcc

2.4V ~ 5.5V

2.4V ~ 5.5V

„ CAPACITANCE (1) (TA = 25oC, f = 1.0 MHz)

SYMBOL

CIN

CDQ

PARAMETER

Input

Capacitance

Input/Output

Capacitance

CONDITIONS

VIN=0V

VI/O=0V

MAX. UNIT

6 pF

8 pF

1. This parameter is guaranteed and not tested.

„ DC ELECTRICAL CHARACTERISTICS ( TA = 0 to + 70oC )

PARAMETER

NAME

PARAMETER

TEST CONDITIONS

VIL

Guaranteed Input Low

Voltage(2)

Vcc=3.0V

Vcc=5.0V

VIH

Guaranteed Input High

Voltage(2)

Vcc=3.0V

Vcc=5.0V

IIL

Input Leakage Current Vcc = Max, VIN = 0V to Vcc

IOL

Output Leakage Current

Vcc = Max, CE = VIH, or OE = VIH,

VI/O = 0V to Vcc

VOL

Output Low Voltage

Vcc = Max, IOL = 2mA

Vcc=3.0V

Vcc=5.0V

VOH

Output High Voltage

Vcc = Min, IOH = -1mA

Vcc=3.0V

Vcc=5.0V

ICC

Operating Power Supply

Current

CE = VIL, IDQ = 0mA, F = Fmax(3)

Vcc=3.0V

Vcc=5.0V

ICCSB

ICCSB1

Standby Current –TTL

Standby Current–CMOS

CE = VIH, IDQ = 0mA

CE Њ Vcc-0.2V,

VIN Њ Vcc - 0.2V or VIN Љ 0.2V

Vcc=3.0V

Vcc=5.0V

Vcc=3.0V

Vcc=5.0V

MIN. TYP. (1) MAX.

UNITS

-0.5

--

0.8

V

2.0

--

Vcc+0.2

V

2.2

--

--

1

uA

--

--

1

uA

--

--

0.4

V

2.4

--

--

V

--

--

--

--

20

mA

40

--

--

0.5

mA

--

--

1

--

0.1

0.7

uA

--

0.6

6

1. Typical characteristics are at TA = 25oC.

2. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.

3. Fmax = 1/tRC .

„ DATA RETENTION CHARACTERISTICS ( TA = 0 to + 70oC )

SYMBOL

PARAMETER

TEST CONDITIONS

MIN. TYP. (1) MAX.

UNITS

VDR

Vcc for Data Retention

CE Њ Vcc - 0.2V

VIN Њ Vcc - 0.2V or VIN Љ 0.2V

1.5

--

--

V

ICCDR

Data Retention Current

CE Њ Vcc - 0.2V

VIN Њ Vcc - 0.2V or VIN Љ 0.2V

--

0.05

0.5

uA

tCDR

Chip Deselect to Data

Retention Time

See Retention Waveform

tR

Operation Recovery Time

0

--

--

ns

TRC (2)

--

--

ns

1. Vcc = 1.5V, TA = + 25OC

2. tRC = Read Cycle Time

R0201-BS616LV2011

3

Revision 2.5

April 2002

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