BS616LV1622TIG70 Просмотр технического описания (PDF) - Brilliance Semiconductor

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BS616LV1622TIG70

Very Low Power/Voltage CMOS SRAM 64K X 16 bit

Brilliance Semiconductor 

BSI

„ TRUTH TABLE

BS616LV1622

MODE

Fully Standby

Output Disable

Read from SRAM

( WORD mode )

Write to SRAM

( WORD mode )

Read from SRAM

( BYTE Mode )

Write to SRAM

( BYTE Mode )

CE1 CE2 OE WE CIO LB UB SAE D0~7 D8~15 VCC Current

H

X

X

X

X

X

X

X

High-Z High-Z

ICCSB, ICCSB1

X

L

X

X

L

H

H

H

X

X

X

X

High-Z High-Z

ICC

L

H

Dout High-Z

L

H

L

H

H

H

L

X

High-Z Dout

ICC

L

L

Dout

Dout

L

H

Din

X

L

H

X

L

H

H

L

X

X

Din

ICC

L

L

Din

Din

L

H

L

H

L

X

X

A-1

Dout High-Z

ICC

L

H

X

L

L

X

X

A-1

Din

X

ICC

„ ABSOLUTE MAXIMUM RATINGS(1)

„ OPERATING RANGE

SYMBOL

VTERM

TBIAS

TSTG

PT

IOUT

PA R A M E T E R

Terminal Voltage with

Respect to GND

Temperature Under Bias

Storage Temperature

Power Dissipation

DC Output Current

R AT IN G

-0.5 to

Vcc+0.5

-40 to +85

-60 to +150

1.0

20

UNITS

V

OC

OC

W

mA

RANGE

Commercial

Industrial

AMBIENT

TEMPERATURE

0 O C to +70 O C

-40 O C to +85 O C

Vcc

2.4V ~ 5.5V

2.4V ~ 5.5V

„ CAPACITANCE (1) (TA = 25oC, f = 1.0 MHz)

1. Stresses greater than those listed under ABSOLUTE MAXIMUM

RATINGS may cause permanent damage to the device. This is a

stress rating only and functional operation of the device at these

or any other conditions above those indicated in the operational

sections of this specification is not implied. Exposure to absolute

maximum rating conditions for extended periods may affect

reliability.

SYMBOL

CIN

CDQ

PARAMETER

Input

Capacitance

Input/Output

Capacitance

CONDITIONS

VIN=0V

VI/O=0V

MAX.

10

12

UNIT

pF

pF

1. This parameter is guaranteed and not 100% tested.

R0201-BS616LV1622

3

Revision 2.1

Jan. 2004

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