BS616LV1611TI(2008) Просмотр технического описания (PDF) - Brilliance Semiconductor

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BS616LV1611TI
(Rev.:2008)

Very Low Power CMOS SRAM 1M X 16 bit

Brilliance Semiconductor 

„ Revision History

Revision No. History

2.2

Add Icc1 characteristic parameter

Improve Iccsb1 spec.

I-grade from 220uA to 100uA at 5.0V

20uA to 16uA at 3.0V

C-grade from 110uA to 50uA at 5.0V

10uA to 8.0uA at 3.0V

2.3

Change I-grade operation temperature range

- from –25OC to –40OC

2.4

Typical value of standby current is replaced by

maximum value in Featues and Description

section

Remove “-: Normal” (Leaded) PKG Material in

ordering information

BS616LV1611

Draft Date

Jan. 13, 2006

Remark

May. 25, 2006

Oct. 31, 2008

R0201-BS616LV1611

11

Revision 2.4

Oct.

2008

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