BGA430(2001) Просмотр технического описания (PDF) - Infineon Technologies

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BGA430
(Rev.:2001)

Broad Band High Gain LNA

Infineon Technologies 

Preliminary

Broad Band High Gain LNA

BGA430

Features

• High gain, |S21|2 = 28.3 dB at 2 GHz

• F50Ω = 2.4 dB

• Small SOT363 package

• Matched to 50Ω

• Isolation > 40dB

• Typical supply voltage: 5V

• SIEGET®-25 technology

Tape loading orientation

Top View

654

W1s

123

Direction of Unreeling

Marking on SOT-363 package

(for example W1s)

corresponds to pin 1 of device

Position in tape: pin 1

opposite of feed hole side

EHA07193

In, 6

4

5

6

3

2

1

VPS05604

Vcc, 1

Out, 3

GND1, 5,2

GND2, 4

ESD: Electrostatic discharge sensitive device, observe handling precaution!

Type

BGA430

Package

SOT363

Marking

PHs

Chip

T0509

Preliminary data sheet

4

2001-04-24

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