BDX65A(2012) Просмотр технического описания (PDF) - Comset Semiconductors

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BDX65A
(Rev.:2012)

NPN SILICON DARLINGTON POWER TRANSISTOR

Comset Semiconductors 

BDX65 – A – B – C

Symbol

Ratings

Test Condition(s) Min Typ Max Unit

fhfe

Cut-off frequency

fT

Transition Frequency

hFE

D.C. current gain (*)

VCE=3 V

IC=5 A

VCE=3 V

IC=5 A

f=1 MHz

VCE=3 V

IC=1 A

VCE=3 V

IC=5 A

VCE=3 V

IC=10 A

BDX65

BDX65A

BDX65B

-

50

- kHz

BDX65C

BDX65

BDX65A

BDX65B

-

7

- MHz

BDX65C

BDX65

BDX65A

BDX65B

- 3300 -

BDX65C

BDX65

BDX65A

BDX65B

1000

-

-

-

BDX65C

BDX65

BDX65A

BDX65B

- 3700 -

BDX65C

(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%

24/10/2012

COMSET SEMICONDUCTORS

3|4

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