BDX65B(2012) Просмотр технического описания (PDF) - Comset Semiconductors
Номер в каталоге
Компоненты Описание
Список матч
BDX65B Datasheet PDF : 4 Pages
| |||
BDX65 – A – B – C
NPN SILICON DARLINGTON POWER TRANSISTOR
The BDX65, BDX65A, BDX65 and BDX65C are mounted in TO-3 metal package.
High current power darlingtons designed for power amplification and switching applications.
The complementary PNP are BDX64, BDX64A, BDX64B, BDX64C.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCEO
Collector-Emitter Voltage
VCBO
VEBO
IC
IB
PT
TJ
TS
Collector-BaseVoltage
Emitter-Base Voltage
Collector Current
Base Current
Power Dissipation
Junction Temperature
Storage Temperature
IC(RMS)
ICM
@ TC = 25°
Value
BDX65
BDX65A
BDX65B
BDX65C
BDX65
BDX65A
BDX65B
BDX65C
60
80
100
120
80
100
120
140
5.0
12
16
0.2
117
-55 to +200
Unit
V
V
V
A
A
W
°C
THERMAL CHARACTERISTICS
Symbol
Ratings
RthJ-C
Thermal Resistance, Junction to Case
Value
1.5
Unit
°C/W
24/10/2012
COMSET SEMICONDUCTORS
1|4
Share Link: 