BDT61 Просмотр технического описания (PDF) - Power Innovations Ltd

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BDT61

NPN SILICON POWER DARLINGTONS

Power Innovations Ltd 

20000

10000

BDT61, BDT61A, BDT61B, BDT61C

NPN SILICON POWER DARLINGTONS

AUGUST 1993 - REVISED MARCH 1997

TYPICAL CHARACTERISTICS

TYPICAL DC CURRENT GAIN

vs

COLLECTOR CURRENT

TCS110AD

TC = -40°C

TC = 25°C

TC = 100°C

COLLECTOR-EMITTER SATURATION VOLTAGE

vs

COLLECTOR CURRENT

TCS110AB

2·0

tp = 300 µs, duty cycle < 2%

IB = IC / 100

1·5

1000

VCE = 3 V

tp = 300 µs, duty cycle < 2%

100

0·5

1·0

IC - Collector Current - A

Figure 1.

1·0

0·5

0

5·0

0·5

TC = -40°C

TC = 25°C

TC = 100°C

1·0

5·0

IC - Collector Current - A

Figure 2.

BASE-EMITTER SATURATION VOLTAGE

vs

COLLECTOR CURRENT

TCS110AC

3·0

TC = -40°C

TC = 25°C

2·5 TC = 100°C

2·0

1·5

1·0

IB = IC / 100

tp = 300 µs, duty cycle < 2%

0·5

0·5

1·0

5·0

IC - Collector Current - A

Figure 3.

PRODUCT INFORMATION

3

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