BD743B Просмотр технического описания (PDF) - Bourns, Inc
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BD743B Datasheet PDF : 5 Pages
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BD743, BD743A, BD743B, BD743C
NPN SILICON POWER TRANSISTORS
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
100
TCS637AA
TC = 125°C
TC = 25°C
TC = -55°C
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
10
IC
IB
= 10
TCS637AB
tp = 300µs, duty cycle < 2%
1·0
VCE = 4 V
tp = 300 µs, duty cycle < 2%
10
0·1
1·0
10
IC - Collector Current - A
Figure 1.
0·1
0·01
100
0·1
TC = -55°C
TC = 25°C
TC = 125°C
1·0
10
100
IC - Collector Current - A
Figure 2.
BASE-EMITTER VOLTAGE
vs
COLLECTOR CURRENT
10
TCS637AC
VCE = 4 V
tp = 300µs, duty cycle < 2%
1·0
0·1
0·1
TC = -55°C
TC = 25°C
TC = 125°C
1·0
10
100
IC - Collector Current - A
Figure 3.
PRODUCT INFORMATION
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
3
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