BD745B Просмотр технического описания (PDF) - Power Innovations

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BD745B

PNP SILICON POWER TRANSISTORS

Power Innovations 

BD745, BD745A, BD745B, BD745C

NPN SILICON POWER TRANSISTORS

AUGUST 1978 - REVISED MARCH 1997

TYPICAL CHARACTERISTICS

TYPICAL DC CURRENT GAIN

vs

COLLECTOR CURRENT

100

TCS635AE

TC = 125°C

TC = 25°C

TC = -55°C

COLLECTOR-EMITTER SATURATION VOLTAGE

vs

COLLECTOR CURRENT

10

IC

IB

= 10

TCS635AF

tp = 300µs, duty cycle < 2%

1·0

0·1

VCE = 4 V

tp = 300 µs, duty cycle < 2%

10

0·1

1·0

10

IC - Collector Current - A

Figure 1.

0·01

100

0·1

TC = -55°C

TC = 25°C

TC = 125°C

1·0

10

100

IC - Collector Current - A

Figure 2.

MAXIMUM SAFE OPERATING REGIONS

MAXIMUM FORWARD-BIAS

SAFE OPERATING AREA

100

SAS635AC

tp = 1 ms,

d = 0.1 = 10%

tp = 10 ms,

d = 0.1 = 10%

10

tp = 50 ms,

d = 0.1 = 10%

DC Operation

1·0

0·1

0·01

1·0

BD745

BD745A

BD745B

BD745C

10

100

VCE - Collector-Emitter Voltage - V

Figure 3.

1000

PRODUCT INFORMATION

3

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