IFR320 Просмотр технического описания (PDF) - Intersil
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IFR320 Datasheet PDF : 7 Pages
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IRFR320, IRFU320
Source to Drain Diode Specifications
PARAMETER
Continuous Source to Drain Current
Pulse Source to Drain Current
(Note 3)
SYMBOL
TEST CONDITIONS
ISD
ISDM
Modified MOSFET
Symbol Showing the In-
tegral Reverse P-N
D
Junction Rectifier
G
MIN
TYP
MAX UNITS
-
-
3.1
A
-
-
12
A
S
Source to Drain Diode Voltage (Note 2)
VSD
TJ = 25oC, ISD = 3.1A, VGS = 0V,
(Figure 13)
-
-
1.6
V
Reverse Recovery Time
Reverse Recovery Charge
trr
TJ = 25oC, ISD = 3.1A, dISD/dt = 100A/µs
120
270
600
ns
QRR
TJ = 25oC, ISD = 3.1A, dISD/dt = 100A/µs
0.64
1.4
3.0
µC
NOTES:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 50V, starting TJ = 25oC, L = 3.1mH, RGS = 25Ω, peak IAS = 3.1A.
Typical Performance Curves Unless Otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75 100 125 150 175
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
4.0
3.2
2.4
1.6
0.8
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
10
0.5
1
0.2
0.1
0.05
0.1 0.02
0.01
SINGLE PULSE
10-2
10-5
10-4
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
10-3
10-2
0.1
t1, RECTANGULAR PULSE DURATION (s)
1
10
FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE
4-397
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