BC856T Просмотр технического описания (PDF) - Infineon Technologies
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BC856T Datasheet PDF : 6 Pages
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PNP Silicon AF Transistor
Preliminary data
For AF input stages and driver applications
High current gain
Low collector-emitter saturation voltage
Complementary types: BC 846T
BC856T
3
2
1 VPS05996
Type
BC856AT
BC856BT
Marking
3As
3Bs
1=B
1=B
Pin Configuration
2=E
3=C
2=E
3=C
Package
SC75
SC75
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
DC collector current
Peak collector current
Total power dissipation, TS = 109 °C
Junction temperature
Storage temperature
Symbol
VCEO
VCBO
VCES
VEBO
IC
ICM
Ptot
Tj
Tstg
Value
65
80
80
5
100
200
250
150
-65 ... 150
Thermal Resistance
Junction - soldering point1)
RthJS
165
1For calculation of RthJA please refer to Application Note Thermal Resistance
Unit
V
mA
mA
mW
°C
K/W
1
Jan-08-2002
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