C369 Просмотр технического описания (PDF) - NXP Semiconductors.
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C369 Datasheet PDF : 12 Pages
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NXP Semiconductors
PNP medium power transistor;
20 V, 1 A
Product data sheet
BC369
handboICo−k2, h.4alfpage
(A)
−2.0
−1.6
−1.2
−0.8
−0.4
MLE293
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
(10)
0
0
−1
−2
−3
−4
−5
VCE (V)
BC369-25.
Tamb = 25 °C.
(1) IB = −12 mA.
(2) IB = −10.8 mA.
(3) IB = −9.6 mA.
(4) IB = −8.4 mA.
(5) IB = −7.2 mA.
(6) IB = −6.0 mA.
(7) IB = −4.8 mA.
(8) IB = −3.6 mA.
(9) IB = −2.4 mA.
(10) IB = −1.2 mA.
Fig.7 Collector current as a function of
collector-emitter voltage; typical values.
−1000
handbook, halfpage
VBE
(mV)
−800
MLE294
−600
−400
−200
0
−10−1
−1
−10
−102
−103
−104
IC (mA)
BC369-25.
VCE = −1 V.
Fig.8 Base-emitter voltage as a function of
collector current; typical values.
2004 Nov 05
8
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