BC33716(2015) Просмотр технического описания (PDF) - Fairchild Semiconductor

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BC33716
(Rev.:2015)

NPN Epitaxial Silicon Transistor

Fairchild Semiconductor 

Thermal Characteristics(1)

Values are at TA = 25°C unless otherwise noted.

Symbol

Parameter

Value

Unit

Power Dissipation

PD

Derate Above 25°C

625

mW

5.0

mW/°C

RθJA

Thermal Resistance, Junction-to-Ambient

200

°C/W

Note:

1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.

Electrical Characteristics

Values are at TA = 25°C unless otherwise noted.

Symbol

Parameter

Conditions

BVCEO

BVCES

BVEBO

ICES

hFE1

hFE2

VCE(sat)

VBE(on)

fT

Collector-Emitter

Breakdown Voltage

BC337

BC338 IC = 10 mA, IB = 0

Collector-Emitter

Breakdown Voltage

BC337

BC338 IC = 0.1 mA, VBE = 0

Emitter-Base Breakdown Voltage

IE = 0.1 mA, IC = 0

Collector Cut-Off Current

BC337 VCE = 45 V, IB = 0

BC338 VCE = 25 V, IB = 0

DC Current Gain

VCE = 1 V, IC = 100 mA

VCE = 1 V, IC = 300 mA

Collector-Emitter Saturation Voltage IC = 500 mA, IB = 50 mA

Base-Emitter On Voltage

VCE = 1 V, IC = 300 mA

Current Gain Bandwidth Product

VCE = 5 V, IC = 10 mA,

f = 50 MHz

Cob

Output Capacitance

VCB = 10 V, IE = 0,

f = 1 MHz

Min.

45

25

50

30

5

100

60

Typ.

2

2

100

12

Max.

100

100

630

0.7

1.2

Unit

V

V

V

nA

V

V

MHz

pF

hFE Classification

Classification

hFE1

hFE2

16

100 ~ 250

60 ~

25

160 ~ 400

100 ~

40

250 ~ 630

170 ~

© 2002 Fairchild Semiconductor Corporation

BC337 / BC338 Rev. 1.5

2

www.fairchildsemi.com

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