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BAS21H Просмотр технического описания (PDF) - Willas Electronic Corp.

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BAS21H
Willas
Willas Electronic Corp. Willas
BAS21H Datasheet PDF : 3 Pages
1 2 3
WILLAS
200mA Surface Mount Switching Diode-250V
1.0A SURFACE MOUNT SCHOTTKYSBOADR-R32IE3RPRaEcCkTaIFgIeERS -20V- 200V
SOD-123+ PACKAGE
FM120-M+
BAS21FHM1T2H0R0U-M+
Pb Free Produc
Features
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
O u t l i n e D r a w i n g Low profile surface mounted application in order to
optimize board space.
Low power loss, high efficiency.
High current capability, low forward voltage drop.
High surge capability.
Guardring for overvoltage protection.
Ultra high-speed switching.
Silicon epitaxial planar chip, metal silicon junction.
.106(2.70) Lead-free parts meet environmental standards of
MIL-STD-19500 /228
RoHS product for packing code suffix "G"
.091(2.30) Halogen free product for packing code suffix "H"
Mechanical data
.075(1.90) Epoxy : UL94-V0 rated flame retardant
Case : Molded plastic, SOD-123H
.059(1.50) ,
Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
Polarity : Indicated by cathode band
Mounting Position : Any
Weight : Approximated 0.011 gram
Package outline
SOD-123H
S O D - 3 2 3 0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.031(0.8) Typ.
.043(1.10)
.031(0.80)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
.004(0.10)MAX.
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Marking Code
Maximum Recurrent Peak Reverse Voltage
12
13
14
15
16
VRRM
20
30
40
50
60
18
10
115 120
80
100
150
200
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105
140
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200
Maximum Average Forward Rectified Current
IO
1.0
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
IFSM
RΘJA
CJ
TJ
TSTG
.008(0.20)
.004(0.10)
-55 to +125
30
40
120
- 65 to +175
-55 to +150
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
.016(0.40) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
VF
0.50
0.70
0.85
0.9
0.92
IR .010(0.25)
0.5
10
NOTES:
.010(0.25)MIN. 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-1
Dimensions in inches and (millimeters)
WILLAS ELECRTeRvO.CNIC CORP
WILLAS ELECTRONIC CORP.

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