BAS170WS-GS08 Просмотр технического описания (PDF) - Vishay Semiconductors
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BAS170WS-GS08 Datasheet PDF : 4 Pages
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BAS170WS
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Reverse breakdown voltage
IR = 10 µA (pulsed)
Leakage current
VR =50 V
VR = 70 V
Forward voltage
IF = 200 mA
I<tief<F = 10 mA
Forward voltage1)
Capacitance
Charge carrier lifetime
Differential forward resistance
IF = 15 mA
VR = 0 V, f = 1 MHz
IF = 25 mA
IE = 5 mA, f = 10 kHz
1) Pulse test; tp ≤ 300 µs
VISHAY
Symbol
Min
V(BR)R
70
IR
IR
VF
VF
VF
Ctot
τ
RF
Typ.
Max
Unit
V
0.1
µA
10
µA
375
410
V
705
750
V
880
1000
mV
1.5
2
pF
100
ps
34
Ω
www.vishay.com
2
Document Number 85653
Rev. 1.2, 18-Nov-03
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