BAP50-05W Просмотр технического описания (PDF) - Philips Electronics
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BAP50-05W Datasheet PDF : 8 Pages
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Philips Semiconductors
General purpose PIN diode
GRAPHICAL DATA
103
handbook, halfpage
rD
(Ω)
102
MLD605
10
1
10−110−1
1
10
102
IF (mA)
f = 100 MHz; Tj = 25 °C.
Fig.2 Forward resistance as a function of
forward current; typical values.
Product specification
BAP50-05W
600
handbook, halfpage
Cd
(fF)
400
MLD606
200
0
0
4
8
12
16
20
VR (V)
f = 1 MHz; Tj = 25 °C.
Fig.3 Diode capacitance as a function of reverse
voltage; typical values.
handbook, h0alfpage
s21 2
(dB)
−1
−2
−3
MLD607
(1)
(2)
(3)
−4
−5
0.5
1
1.5
2
2.5
3
f (GHz)
(1) IF = 10 mA.
(2) IF = 1 mA.
(3) IF = 0.5 mA.
Diode inserted in series with a 50 Ω stripline circuit and
biased via the analyzer Tee network.
Tamb = 25 °C.
Fig.4 Insertion loss |s21|2 of the diode in on-state
as a function of frequency; typical values.
0
handbook,
s21
2halfpage
(dB)
−5
MLD608
−10
−15
−20
−25
0.5
1
1.5
2
2.5
3
f (GHz)
Diode zero biased and inserted in series with a 50 Ω stripline circuit.
Tamb = 25 °C.
Fig.5 Isolation (|s21|2) of the diode in off-state as a
function of frequency; typical values.
2001 Apr 17
4
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