BA979 Просмотр технического описания (PDF) - Vishay Semiconductors

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BA979

RF PIN Diodes - Single in QuadroMELF SOD-80

Vishay Semiconductors 

www.vishay.com

TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

100

BA979, BA979S

Vishay Semiconductors

10

Tamb = 25 °C

1

Scattering Limit

0.1

0.01

0

0.4

0.8

1.2

1.6

2.0

95 9735

VF - Forward Voltage (V)

Fig. 1 - Forward Current vs. Forward Voltage

10 000

1000

100

f > 20 MHz

Tj = 25 °C

10

1

0.001 0.01

0.1

1

10

95 9734

IF - Forward Current (mA)

Fig. 2 - Differential Forward Resistance vs. Forward Current

20

Π - Circuit with 10 dB Attenuation

0

V0 = 40 dBmV

f1 = 100 MHz unmodulated

- 20

- 40

- 60

- 80

0

20

40

60

80

95 9733 f2 , modulated with 200 kHz, m = 100 % (MHz)

Fig. 3 - Typ. Cross Modulation Distortion vs. Frequency f2

Rev. 1.6, 21-May-12

2

Document Number: 85533

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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