ATP112(2010) Просмотр технического описания (PDF) - SANYO -> Panasonic
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ATP112 Datasheet PDF : 4 Pages
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Ordering number : ENA1754
ATP112
SANYO Semiconductors
DATA SHEET
ATP112
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
• ON-resistance RDS(on)1=33mΩ(typ.)
• 4V drive
• Input Capacitance Ciss=1450pF(typ.)
• Halogen free compliance
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Gate-to-Source Voltage
VDSS
VGSS
Drain Current (DC)
ID
Drain Current (PW≤10μs)
IDP
Allowable Power Dissipation
PD
Channel Temperature
Tch
Storage Temperature
Tstg
Avalanche Energy (Single Pulse) *1
EAS
Avalanche Current *2
IAV
Note :*1 VDD=--10V, L=500μH, IAV=--13A
*2 L≤500μH, Single pulse
Conditions
PW≤10μs, duty cycle≤1%
Tc=25°C
Ratings
Unit
--60
V
±20
V
--25
A
--75
A
40
W
150
°C
--55 to +150
°C
50 mJ
--13
A
Package Dimensions
unit : mm (typ)
7057-001
6.5
4
1.5
0.4
4.6
2.6
0.4
Product & Package Information
• Package
: ATPAK
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type: TL
TL
Marking
ATP112
LOT No.
2
1
3
0.8
0.6
2.3 2.3
0.55
0.4
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : ATPAK
Electrical Connection
2,4
1
3
http://semicon.sanyo.com/en/network
72110PA TK IM TC-00002329 No. A1754-1/4
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