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ATP103

P-Channel Silicon MOSFET

SANYO -> Panasonic 

Ordering number : ENA1623A

ATP103

SANYO Semiconductors

DATA SHEET

ATP103

P-Channel Silicon MOSFET

General-Purpose Switching Device

Applications

Features

• Low ON-resistance

• Slim package

• Halogen free compliance

• Large current

• 4.5V drive

• Protection diode in

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter

Symbol

Drain-to-Source Voltage

Gate-to-Source Voltage

VDSS

VGSS

Drain Current (DC)

ID

Drain Current (PW≤10μs)

IDP

Allowable Power Dissipation

PD

Channel Temperature

Tch

Storage Temperature

Tstg

Avalanche Energy (Single Pulse) *1

EAS

Avalanche Current *2

IAV

Note :*1 VDD=--10V, L=100μH, IAV=--28A

*2 L≤100μH, Single pulse

Package Dimensions

unit : mm (typ)

7057-001

Conditions

PW≤10μs, duty cycle≤1%

Tc=25°C

ATP103-TL-H

6.5

1.5

4.6

2.6

0.4

0.4

4

Ratings

Unit

--30

V

±20

V

--55

A

--165

A

50

W

150

°C

--55 to +150

°C

57 mJ

--28

A

Product & Package Information

• Package

: ATPAK

• JEITA, JEDEC

:-

• Minimum Packing Quantity : 3,000 pcs./reel

Packing Type: TL

TL

Marking

ATP103

LOT No.

2

1

3

0.8

0.6

2.3 2.3

0.55

0.4

1 : Gate

2 : Drain

3 : Source

4 : Drain

SANYO : ATPAK

Electrical Connection

4,2

1

3

http://semicon.sanyo.com/en/network

61312 TKIM/D0209PA TKIM TC-00002144 No.A1623-1/7

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