ATP102 Просмотр технического описания (PDF) - SANYO -> Panasonic

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ATP102

P-Channel Silicon MOSFET

SANYO -> Panasonic 

Ordering number : ENA1479A

ATP102

SANYO Semiconductors

DATA SHEET

ATP102

P-Channel Silicon MOSFET

General-Purpose Switching Device

Applications

Features

• Low ON-resistance

• Slim package

• Halogen free compliance

• Large current

• 4.5V drive

• Protection diode in

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Drain Current (PW≤10μs)

Allowable Power Dissipation

Channel Temperature

Storage Temperature

Avalanche Energy (Single Pulse) *1

Avalanche Current *2

Note :*1 VDD=10V, L=200μH, IAV=20A

*2 L≤200μH, Single pulse

Symbol

VDSS

VGSS

ID

IDP

PD

Tch

Tstg

EAS

IAV

Package Dimensions

unit : mm (typ)

7057-001

Conditions

PW≤10μs, duty cycle≤1%

Tc=25°C

ATP102-TL-H

6.5

1.5

4.6

2.6

0.4

0.4

4

Ratings

Unit

--30

V

±20

V

--40

A

--120

A

40

W

150

°C

--55 to +150

°C

58 mJ

20

A

Product & Package Information

• Package

: ATPAK

• JEITA, JEDEC

:-

• Minimum Packing Quantity : 3,000 pcs./reel

Packing Type: TL

TL

Marking

ATP102

LOT No.

2

1

3

0.8

0.6

2.3 2.3

0.55

0.4

1 : Gate

2 : Drain

3 : Source

4 : Drain

SANYO : ATPAK

Electrical Connection

4,2

1

3

http://semicon.sanyo.com/en/network

61312 TKIM/52709PA MSIM TC-00001968 No.A1479-1/7

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