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AT25DF641

64-Megabit 2.7-volt Minimum SPI Serial Flash Memory

Atmel Corporation 

Features

• Single 2.7V - 3.6V Supply

• Serial Peripheral Interface (SPI) Compatible

– Supports SPI Modes 0 and 3

– Supports RapidS® Operation

– Supports Dual-Input Program and Dual-Output Read

• Very High Operating Frequencies

– 100 MHz for RapidS

– 85 MHz for SPI

– Clock-to-Output (tV) of 5 ns Maximum

• Flexible, Optimized Erase Architecture for Code + Data Storage Applications

– Uniform 4-Kbyte Block Erase

– Uniform 32-Kbyte Block Erase

– Uniform 64-Kbyte Block Erase

– Full Chip Erase

• Individual Sector Protection with Global Protect/Unprotect Feature

– 128 Sectors of 64-Kbytes Each

• Hardware Controlled Locking of Protected Sectors via WP Pin

• Sector Lockdown

– Make Any Combination of 64-Kbyte Sectors Permanently Read-Only

• 128-Byte Programmable OTP Security Register

• Flexible Programming

– Byte/Page Program (1 to 256 Bytes)

• Fast Program and Erase Times

– 1.0 ms Typical Page Program (256 Bytes) Time

– 50 ms Typical 4-Kbyte Block Erase Time

– 250 ms Typical 32-Kbyte Block Erase Time

– 400 ms Typical 64-Kbyte Block Erase Time

• Program and Erase Suspend/Resume

• Automatic Checking and Reporting of Erase/Program Failures

• Software Controlled Reset

• JEDEC Standard Manufacturer and Device ID Read Methodology

• Low Power Dissipation

– 5 mA Active Read Current (Typical at 20 MHz)

– 5 µA Deep Power-Down Current (Typical)

• Endurance: 100,000 Program/Erase Cycles

• Data Retention: 20 Years

• Complies with Full Industrial Temperature Range

• Industry Standard Green (Pb/Halide-free/RoHS Compliant) Package Options

– 16-Lead SOIC (300-mil wide)

– 8-Contact Very Thin DFN (6 x 8 mm)

64-Megabit

2.7-volt

Minimum

SPI Serial Flash

Memory

AT25DF641

Preliminary

See applicable errata

in Section 18.

1. Description

The AT25DF641 is a serial interface Flash memory device designed for use in a wide

variety of high-volume consumer based applications in which program code is shad-

owed from Flash memory into embedded or external RAM for execution. The flexible

erase architecture of the AT25DF641, with its erase granularity as small as 4-Kbytes,

makes it ideal for data storage as well, eliminating the need for additional data storage

EEPROM devices.

3680E–DFLASH–12/08

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