AS1333 Просмотр технического описания (PDF) - austriamicrosystems AG
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AS1333 Datasheet PDF : 16 Pages
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AS1333
Data Sheet - Electrical Characteristics
6 Electrical Characteristics
TA = TJ = -40ºC to +85ºC; PVIN = VDD = EN = 3.6V, unless otherwise noted. Typ. values are at TA=25°C.
Table 3. Electrical Characteristics
Symbol
Parameter
Conditions
Min Typ Max
VFB
ISHDN
Feedback Voltage
Shutdown supply current
PVIN = 3.6V
EN = SW = 0V1
3.028 3.09 3.15
0.01
2
IQ
DC bias current into VDD
FB = 0V, No Switching2
1
1.4
RDSON(P)
RDSON(N)
ILIM,PFET
Pin-Pin Resistance for PFET
Pin-Pin Resistance for NFET
Switch peak current limit
ISW = 200mA; TA = +25°C
ISW = 200mA
ISW = -200mA; TA = +25°C
ISW = -200mA
Current limit is built-in, fixed,
and not adjustable.
935
140
300
1100
200
230
415
485
1200
FOSC
VIH,EN
VIL,EN
IPIN,ENABLE
Internal oscillator frequency
Logic high input threshold
Logic low input threshold
Pin pull down current
1.8
2
2.2
1.2
0.5
5
10
Units
V
µA
mA
mΩ
mΩ
mA
MHz
V
V
µA
1. Shutdown current includes leakage current of PFET.
2. IQ specified here is when the part is operating at 100% duty cycle.
System Characteristics
TA = 25ºC; PVIN = VDD = EN = 3.6V, unless otherwise noted. The following parameters are verified by characterisation
and are not production tested.
Table 4. System Characteristics
Symbol
Parameter
Conditions
Min Typ Max Units
T_ON
Turn on time (time for output to
reach 3.09V from Enable low to
high transition)
EN = Low to High, VIN = 4.2V,
VOUT = 3.09V, COUT = 10µF,
IOUT ≤ 1mA
210 350 µs
η
Efficiency
(L = 3.3µH, DCR ≤ 100mΩ)
VIN = 3.6V, VOUT = 3.09V,
IOUT = 400mA
96
%
VOUT_ripple Ripple voltage, PWM mode1
VIN = 4.2V, VOUT = 3.09V,
IOUT = 10mA to 400mA
5
mVp-p
VIN = 600mV perturbance, over Vin
Line_tr
Line transient response
range 3.4V to 5.5V
TRISE = TFALL = 10µs, VOUT = 3.09V,
50
mVpk
IOUT = 100mA
VIN = 4.2V, VOUT = 3.09V, transients
Load_tr
Load transient response
up
50
mVpk
to 100mA, TRISE = TFALL = 10µs
1. Ripple voltage should measured at COUT electrode on good layout PC board and under condition using sug-
gested inductors and capacitors.
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Revision 1.02
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