V29C51002B Просмотр технического описания (PDF) - Mosel Vitelic Corporation

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V29C51002B

2 MEGABIT (262,144 x 8 BIT) 5 VOLT CMOS FLASH MEMORY

Mosel Vitelic Corporation  

MOSEL VITELIC

V29C51002T/V29C51002B

Waveforms of CE Controlled-Program Cycle

tWC

ADDRESS

5555H

PA

PA(1)

tAS

tRC

tAH

WE

OE

tWP

tWHWH1

CE

tOES

tWPH

tDS

tDH

I/O

A0H

PD(2)

I/O7 DOUT

Waveforms of Erase Cycle(1)

ADDRESS

tWC

5555H

tAS

2AAAH

CE

5555H

tAH

5555H

2AAAH

tDF

tOE

tOH

51002-11

(5555H for Chip Erase)

SA

OE

tWP

WE

tCS

tWPH

tDS

tDH

I/O

AAH

55H

80H

NOTES:

1. PA: The address of the memory location to be programmed.

2. PD: The data at the byte address to be programmed.

3. SA: The sector address for Sector Erase.

AAH

55H

tWHWH 23

(10H for

Chip Erase)

30H

51002-12

V29C51002T/V29C51002B Rev. 2.1 October 2000

7

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